RR110-A111-00

Description

TMR (Tunnel MagnetoResistance) elements were introduced as a new type of magnetoresistance sensor for industrial applications. They are constructed as a magnetic multilayer film material.  TMR magnetic field sensing elements exhibit a greater change in resistivity, as a function of applied magnetic field induction, than that of the previously developed magnetoresistance technologies, AMR and GMR.  The term Magnetic Tunnel Junction (MTJ) is used to refer to a TMR sensing element.

Common Applications

Door or lid closure detector , Smart phone/ Tablet/ Laptop , Motor Controllers , Proximity Detection , Water/Electric/open-close detection , Fluid Level Detection.

Key Benefits

High Sensitivity , Stable Temp. perfermance , Resistant to mechanical stress , Low Temp. Consumption , High Frequency performance.

PDF File Preview

• BACK
• ZOOM